发明名称 MULTIBAND LOW NOISE AMPLIFIER
摘要 A multi band low noise amplifier is provided to reduce a value of a passive device for input terminal matching in a low frequency band by sharing the passive device of the input terminal matching circuit. A first matching circuit(110) performs the impedance matching of the input terminal in a low frequency region. A first transistor includes a gate connected to a first matching circuit and a drain connected to an output terminal, and performs the amplification operation of the low frequency input. A first degeneration inductor is connected between the ground and the source of the first transistor. A second matching circuit(120) performs the impedance matching of the input terminal in a high frequency region. A second transistor includes the gate connected to the second matching circuit and the drain connected to the output terminal, and performs the amplification operation of the high frequency input. A second degeneration inductor is connected between the ground and the source of the second transistor.
申请公布号 KR20090056789(A) 申请公布日期 2009.06.03
申请号 KR20080064462 申请日期 2008.07.03
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;ICU RESEARCH AND INDUSTRIAL COOPERATION GROUP 发明人 KIM, CHANG SUN;KIM, MU SUNG;YOON, BYOUNG JIN;HONG, EUN PYO;YOO, HYUNG JOUN
分类号 H03F1/26 主分类号 H03F1/26
代理机构 代理人
主权项
地址