FABRICATION METHOD OF SURFACE-MODIFIED NANOWIRE SENSOR

摘要

A surface-modified nanowire sensor and a manufacturing method thereof are provided to flow a reforming solution along a trench valley in order to exclude the interference action of a substrate surface. A surface-modified nanowire sensor comprises: a planar substrate(110) whose some parts are etched to form a trench valley; a protective layer(120a) formed for electrical truncation on the surface of the planar substrate; a sensor structure consisting of a sensing electrode, formed on the protective layer of the planar substrate; and a nanowire sensing material which is in contact with the sensing electrode and formed above the trench valley and whose conductivity is changed when the nanowire sensing material is selectively interacted with a certain material.