| 摘要 |
<p>A method of manufacturing the flash memory device is provided to reduce the intensity of the electric field concentrated on the floating gate and improve electrical property of the flash memory device. The method of manufacturing the flash memory device comprises the preparation process of the semiconductor substrate(300), and the injection process of the device isolation film(308) and the formation step of the dielectric film(310). The preparation process of the semiconductor substrate is performed in order to form the device isolation region and active region on the semiconductor substrate. The device isolation region defines the active region. The device isolation region has the trench on the semiconductor substrate. The active region has the tunnel insulating layer(302) and the first conductive film(304) on the semiconductor substrate. The injection process of the device isolation film is performed to form the device isolation film filling up the trench. The formation step of the dielectric film is performed to form the dielectric film on the first conductive film and device isolation film.</p> |
