MAGNETIC TUNNEL JUNCTION DEVICE

摘要

A magnetic tunnel junction device is provided to have high a magnetoresistance ratio by making a ferromagnetic layer grown on an insulating layer in epitaxy. A seed layer(12) is laminated on a substrate(11), and an anti- ferroelectric material layer(13) is laminated on the seed layer. A pinned layer(14) is laminated on the anti- ferroelectric material layer, and a tunnel barrier layer(15) is fixed on the pinned layer. A free layer(16) is laminated on the tunnel barrier layer, and a capping layer(17) is laminated on the free layer.