| 摘要 |
A manufacturing method of a semiconductor device is provided to reduce a defect generation by removing a terrace of a contact hole edge generated in forming a micro contact hole. An insulation film is formed on a substrate(100). A preliminary contact hole is formed by selectively wet-etching the insulation film. A contact hole(120c) is formed by etching-back a whole surface of the insulation film by a dry etching. The contact hole is deeper than the preliminary contact hole. After forming the contact hole, the insulation film is sputtered. Argon is used during the sputtering.
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