| 摘要 |
A manufacturing method of a semiconductor device is provided to reduce manufacturing costs and time by make a process of forming a gate oxide film of a high voltage device simple. A gate oxide substance and a photoresist substance are coated on the substrate in order, and an exposure process and a first photolithography process are performed so that a photoresist pattern(36) is formed. A gate oxide film is formed by performing an etching process of the substrate with the photoresist pattern. A second photolithography process of substrate is performed and the photoresist pattern is removed.
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