| 摘要 |
A non-volatile memory device and a page buffer circuit thereof are provided to include a precharge unit, thereby shortening a bit line precharge time during a data reading action. A page buffer circuit(121) comprises as follows. A bit line precharge unit(125) provides a bit line precharge voltage for precharging bit lines connected to a selected memory cell. A sensing node precharge unit(124) precharges a sensing node at a power voltage level during a reading evaluation time of the voltages of the precharged bit lines. When the voltages of the precharged bit lines are changed according to data stored in the memory cell, a latch unit(126) connects the bit lines with the sensing node to sense the changed bit line voltages.
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