| 摘要 |
A manufacturing method of a semiconductor memory device is provided to relieve a thermal stress of a tungsten film included in a gate pattern. A semiconductor substrate in which a gate pattern(118) including a tungsten film is formed is provided. A semiconductor board is loaded on deposition equipment, and the sealing insulating layer(120) is deposited on the surface of the gate pattern and the semiconductor board. A temperature of the deposition equipment is ramped-down lower than 600°C, and the semiconductor board is unloaded from the deposition equipment. The gate pattern comprises a control gate consisting of a turner insulating layer, a floating gate, a dielectric film, and a tungsten film.
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