发明名称 |
Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process |
摘要 |
A method and structure for reducing leakage currents in integrated circuits based on a direct silicon bonding (DSB) fabrication process. After recessing a top semiconductor layer and an underlying semiconductor substrate, a dielectric layer may be deposited and etched back to form embedded spacers. Conventional source/drain regions may then be formed.
|
申请公布号 |
US7541629(B1) |
申请公布日期 |
2009.06.02 |
申请号 |
US20080106658 |
申请日期 |
2008.04.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;YIN HAIZHOU;LUO ZHIJIONG |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|