发明名称 Image sensor with a capacitive storage node linked to transfer gate
摘要 A CMOS imaging system with increased charge storage capacitance of pixels yet decreased physical size, kTC noise and active area. A capacitor is linked to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
申请公布号 US7542085(B2) 申请公布日期 2009.06.02
申请号 US20030721190 申请日期 2003.11.26
申请人 APTINA IMAGING CORPORATION 发明人 ALTICE, JR. PETER P.;MCKEE JEFFREY A.
分类号 H04N3/14;H01L27/00;H01L27/146;H04N3/15;H04N5/353;H04N5/363;H04N5/3745;H04N5/378 主分类号 H04N3/14
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