发明名称 |
Trench diffusion isolation in semiconductor devices |
摘要 |
A semiconductor structure is formed comprising a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and claimed.
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申请公布号 |
US7541260(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20070677430 |
申请日期 |
2007.02.21 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
PFIRSCH FRANK;RIEGER WALTER |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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