APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION

摘要

An atomic layer deposition apparatus is provided to improve reactivity between the source gases, the deposition speed of a thin film, and the quality of the thin film by making source gas into plasma. An atomic layer deposition apparatus comprises: a process chamber performing thin film deposition by accepting a substrate; a susceptor supporting the substrate; a shower head providing source gas(S2) to the substrate; and a plasma generation part making one or more source gases into plasma and supplying the source gases inside the chamber. The plasma generation part comprises: a plasma chamber(151) accepting the source gas and providing a space which generates plasma(P); an electrode part(160,161,163) forming an electric field inside the plasma chamber; an insulation part(165) for insulation of the electrode part; and a power supply part(167) applying radio frequency power to the electrode part.