| 摘要 |
A gas distribution unit and a plasma treating apparatus for a substrate including the same are provided to perform advantage by capacitively-coupled plasma and advantage by inductively-coupled plasma at the same time by forming a spray hole in dielectric. A plasma treating apparatus(100) for a substrate includes a process chamber(110), a susceptor(120), a source gas supply part(140), and a gas distribution unit(160). The susceptor supports a substrate inside the process chamber. The source gas supply part supplies a source gas. The gas distribution unit is separated from a top surface of an inner side of the process chamber in order to flow the source gas, and is made of dielectric material which sprays the source gas. The source gas supply part includes a first source line(141) and a second source line(142). The first source line supplies a first source gas to a top part of a plate. The second source line supplies a second source gas to a groove.
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