发明名称 APPARATUS FOR DEPOSITION THIN FILM ON SUBSTRATE USING PLASMA
摘要 A thin film depositing apparatus is provided to improve productivity by installing the electrode having a target role inside a plasma generation part and applying thin film deposition using sputtering effect on a vertical reactor. A thin film depositing apparatus comprises: a vertical process tube(100) in which thin film deposition is progressed; a boat(200) which is located inside the process tube, and in which a plurality of wafers are loaded; a gas supply member being located between the process tube and the boat and providing the process gas from outside to wafers; and a plasma generation member(330) being installed inside the gas supply member and making the process gas in plasma state. The plasma generation member comprises: a target(332) being installed in a plasma generation space and consisting of the sourced metal of the thin film evaporated in the wafers; and a power source(334) applying the necessary power on the target for the plasma generation.
申请公布号 KR20090055349(A) 申请公布日期 2009.06.02
申请号 KR20070122225 申请日期 2007.11.28
申请人 KOOKJE (KOKUSAI) ELECTRIC KOREA CO., LTD. 发明人 PARK, YONG SUNG;LEE, SUNG KWANG
分类号 C23C16/50;C23C16/00;H01L21/285 主分类号 C23C16/50
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