发明名称 |
APPARATUS FOR DEPOSITION THIN FILM ON SUBSTRATE USING PLASMA |
摘要 |
A thin film depositing apparatus is provided to improve productivity by installing the electrode having a target role inside a plasma generation part and applying thin film deposition using sputtering effect on a vertical reactor. A thin film depositing apparatus comprises: a vertical process tube(100) in which thin film deposition is progressed; a boat(200) which is located inside the process tube, and in which a plurality of wafers are loaded; a gas supply member being located between the process tube and the boat and providing the process gas from outside to wafers; and a plasma generation member(330) being installed inside the gas supply member and making the process gas in plasma state. The plasma generation member comprises: a target(332) being installed in a plasma generation space and consisting of the sourced metal of the thin film evaporated in the wafers; and a power source(334) applying the necessary power on the target for the plasma generation.
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申请公布号 |
KR20090055349(A) |
申请公布日期 |
2009.06.02 |
申请号 |
KR20070122225 |
申请日期 |
2007.11.28 |
申请人 |
KOOKJE (KOKUSAI) ELECTRIC KOREA CO., LTD. |
发明人 |
PARK, YONG SUNG;LEE, SUNG KWANG |
分类号 |
C23C16/50;C23C16/00;H01L21/285 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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地址 |
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