发明名称 Plasma oxidation and removal of oxidized material
摘要 A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
申请公布号 US7540935(B2) 申请公布日期 2009.06.02
申请号 US20050076725 申请日期 2005.03.09
申请人 LAM RESEARCH CORPORATION 发明人 KIM YUNSANG;BAILEY, III ANDREW D.;YOON HYUNGSUK ALEXANDER;HOWALD ARTHUR M.
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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