发明名称 |
Plasma oxidation and removal of oxidized material |
摘要 |
A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
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申请公布号 |
US7540935(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20050076725 |
申请日期 |
2005.03.09 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
KIM YUNSANG;BAILEY, III ANDREW D.;YOON HYUNGSUK ALEXANDER;HOWALD ARTHUR M. |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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