APPARATUS FOR DEPOSITION THIN FILM ON SUBSTRATE USING PLASMA

摘要

An apparatus for depositing a thin film using plasma is provided to shorten deposition time by including a plasma generation part within a processing chamber and preventing excited process gas from being reunited before reaching to a wafer. An apparatus for depositing a thin film using plasma comprises: a vertical process tube(100) in which deposition is progressed; a boat(200) which is located inside the process tube, and in which a plurality of wafers are loaded; a gas supply member(310) being located between the process tube and the boat and providing the process gas from outside to a plurality of wafers; and a plasma generation member(330) being installed inside the gas supply member and making the process gas in plasma state. The gas supply member provides a plasma generation space(a) with being apart from the inner wall of the process tube and includes a partition(312) in which a plurality of through-holes(312a) are formed at the single side facing the boat.