NON-VOLATILE MEMORY DEVICE, AND MEMORY CARD AND SYSTEM INCLUDING THE SAME

摘要

A flash memory device, a card and a system including the same are provided to change an energy level of a valence band and a conduction band by including a nitrogen atom in a tunneling insulation layer. A substrate(10) includes a source region, a drain region, and a channel region which is positioned between the source region and the drain region. A tunneling insulation layer(20) is formed on the channel region of the substrate. The tunneling insulation layer includes a first region and a second region. The first region has a first nitrogen atomic percent. The second region has a second nitrogen atomic percent lower than the first nitrogen atomic percent. A charge storage layer(30) is formed on the tunneling insulation layer. A blocking insulation layer(40) is formed on the charge storage layer. A gate electrode(50) is formed on the blocking insulation layer.