发明名称 POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND MANUFACTURING METHOD
摘要 An apparatus and a method for manufacturing polycrystalline silicon are provided to stop flow of a gas by closing a valve which is formed in a distribution tube of a gas supply hole around a central part of a reactor. An apparatus for manufacturing polycrystalline silicon includes a plurality of gas supply holes(6A). The gas supply holes spray a source gas toward a top direction in an inner part of a reactor(1). A plurality of silicon seed rods(4) is installed in the reactor. A gas exhaust hole(7) is formed, and exhausts an exhaust gas after reaction. The polycrystalline silicon is formed by supplying the source gas to a surface after heating the silicon seed rod. A gas distribution tube(9) is connected to the gas supply hole. A valve(21) is formed in the gas distribution tube, and opens/closes the gas distribution tube. A valve control part(22) is connected to the valve.
申请公布号 KR20090055488(A) 申请公布日期 2009.06.02
申请号 KR20080117944 申请日期 2008.11.26
申请人 MITSUBISHI MATERIALS CORP. 发明人 ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI;HATAKEYAMA NAOKI
分类号 H01L21/20 主分类号 H01L21/20
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