发明名称 |
POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND MANUFACTURING METHOD |
摘要 |
An apparatus and a method for manufacturing polycrystalline silicon are provided to stop flow of a gas by closing a valve which is formed in a distribution tube of a gas supply hole around a central part of a reactor. An apparatus for manufacturing polycrystalline silicon includes a plurality of gas supply holes(6A). The gas supply holes spray a source gas toward a top direction in an inner part of a reactor(1). A plurality of silicon seed rods(4) is installed in the reactor. A gas exhaust hole(7) is formed, and exhausts an exhaust gas after reaction. The polycrystalline silicon is formed by supplying the source gas to a surface after heating the silicon seed rod. A gas distribution tube(9) is connected to the gas supply hole. A valve(21) is formed in the gas distribution tube, and opens/closes the gas distribution tube. A valve control part(22) is connected to the valve.
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申请公布号 |
KR20090055488(A) |
申请公布日期 |
2009.06.02 |
申请号 |
KR20080117944 |
申请日期 |
2008.11.26 |
申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI;HATAKEYAMA NAOKI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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