| 摘要 |
An atomic layer deposition apparatus is provided to reduce time for replacing and exhausting a source gas in a deposition process by controlling volume of a reaction space which comprises a reaction cell, a shower head, and a susceptor. An atomic layer deposition apparatus includes a reaction cell(120) according to a substrate. The reaction cell is contacted in a susceptor(130) and a shower head(110). An interval control part is included in order to control an interval between the susceptor and the shower head. The atomic layer deposition apparatus controls the interval between the susceptor and the shower head by controlling height of the reaction cell.
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