发明名称 Multilayer zinc oxide varistor
摘要 A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.
申请公布号 US7541910(B2) 申请公布日期 2009.06.02
申请号 US20060440064 申请日期 2006.05.25
申请人 SFI ELECTRONICS TECHNOLOGY INC. 发明人 LIEN WEI-CHENG;KUO CHENG-TSUNG;LIN JUN-NUN;ZHU JIE-AN;ZHANG LI-YUN
分类号 H01C7/10 主分类号 H01C7/10
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