| 摘要 |
The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1>=W1; W1>W2; and (Wf1-W1)/2L1<(W1-W2)/2L2 hold wherein Wf1 is a width on the first front end face; W1 is a width in a position away from the first front end face by a distance L1; and W2 is a width in a position away from said the front end face by a distance L1+L2 (whereas L1+L2<=L). The stripe structure of the second first light emitting portion has a section having a width changing along a resonator direction and includes a second front end face, and relationships of Wf2>=W3; W3>W4; and (Wf2-W3)/2L3<(W3-W4)/2L4 hold wherein Wf2 is a width on the second front end face; W1 is a width in a position away from the second front end face by a distance L3 (whereas L1<>L3); and W4 is a width in a position away from the second front end face by a distance L3+L4.
|
