发明名称 Phase shift mask
摘要 A phase shift mask includes a first non-phase shift region, a first phase shift region adjacent the first non-phase shift region, a second non-phase shift region, a second phase shift region adjacent the second non-phase shift region, and an opaque region interposed between said second phase shift and non-phase shift regions. The first and second non-phase shift regions transmit an exposure light at its original phase, whereas the first and second phase shift regions invert the phase of the exposure light. The phase shift mask is manufactured by first forming a layer of opaque material on a transparent mask substrate. The first phase shift region and the second phase and non-phase shift regions are formed by selectively etching the opaque material and underlying portions of the mask substrate to form recesses in the substrate. On the other hand, only the opaque layer is etched from the mask substrate to form the first non-phase shift region, and is left on the substrate between the second phase shift and non-phase shift regions.
申请公布号 US7541118(B2) 申请公布日期 2009.06.02
申请号 US20080969979 申请日期 2008.01.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG MYUNG-AH;SHIN IN-KYUN
分类号 G03F1/00;H01L21/027;G03C5/00;G03F1/14;G03F9/00 主分类号 G03F1/00
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