发明名称 |
Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas |
摘要 |
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.
|
申请公布号 |
US7541234(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20050266024 |
申请日期 |
2005.11.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;INFINEON TECHNOLOGIES AG |
发明人 |
CHANG CHONG KWANG;ZHUANG HAOREN;LIPINSKI MATTHIAS;MISHRA SHAILENDRA;KWON O SUNG;TJOA TJIN TJIN;KO YOUNG GUN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|