| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent a charge gain or a charge loss by using a nitride film as an insulation film which covers the gate. A gate stack comprises a floating gate(110), a dielectric film(120), and a control gate, and is formed on a semiconductor substrate(100). A spacer(140b) is formed in both sides of the gate stack. A nitride film(150) is formed on the semiconductor substrate as an interlayer insulation film in order to cover the gate stack and the spacer. The nitride film is flattened. The contact electrode is formed through the nitride film in order to be contacted with the semiconductor substrate. Thickness of the nitride film is 5000~7000Å.
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