| 摘要 |
A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film.
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