| 摘要 |
A thin film transistor array panel is provided, which includes: an insulating substrate; a gate line formed on the substrate and including a gate electrode; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer opposite the gate electrode; a data line formed on the gate insulating layer and including a first source electrode located on the semiconductor layer; first and second drain electrodes formed on the semiconductor layer, separated from each other and overlapping the gate electrode; a passivation layer formed on the data line and the first and the second drain electrodes; and first and second pixel electrodes electrically connected to the first and the second drain electrodes, respectively, wherein an overlapping area between the gate electrode and the first drain electrode is different from an overlapping area between the gate electrode and the second drain electrode. |
