| 摘要 |
A semiconductor device includes: a first circuit in which a diffusion area A1, a first gate G1, a diffusion area A2, a second gate G2 and a diffusion area A3 constitute two transistors; and a second circuit in which a diffusion area B1, the first gate G1, a diffusion area B2, the second gate G2 and a diffusion area B3 constitute two transistors. The diffusion areas A1 and B3, the diffusion areas A2 and B2 and the diffusion areas A3 and B1 are connected. Alternatively, the diffusion areas A1, A3 and B2 and the diffusion areas A2, B1 and B3 are connected.
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