发明名称 |
Memory cell comprising one MOS transistor with an isolated body having a reinforced memory effect |
摘要 |
A memory cell with one transistor on a floating body region isolated by its lower surface by a junction. According to the present invention, the junction is non-planar and, for example, includes a protrusion directed towards the transistor surface.
|
申请公布号 |
US7541636(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20060479421 |
申请日期 |
2006.06.30 |
申请人 |
STMICROELECTRONICS CROLLES SAS |
发明人 |
RANICA ROSSELLA;VILLARET ALEXANDRE;MAZOYER PASCALE |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|