| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a finer line pattern by using a photoresist resin composition which is high in etching resistance, and can be solubilized by irradiation. <P>SOLUTION: The photoresist resin composition comprises a polymer containing an acid-responsive compound unit of following formula (1) or (2) (e.g. an adamantane skeleton) and a photoactive acid precursor. In formulas, R<SP>1</SP>represents an alkyl group or a cycloalkyl group, and R<SP>2</SP>represents a hydrogen atom, an alkyl group or a cycloalkyl group, R<SP>3</SP>represents a hydrogen atom or a methyl group, R<SP>4</SP>represents a hydrogen atom, a halogen atom, an alkyl group, an oxygen-containing group, an amino group or an N-substituted amino group, the Z ring represents an adamantane ring, n represents an integer of not less than 1. In formula (1), R<SP>1</SP>and R<SP>2</SP>can, jointly and together with the adjacent carbon atom, form an alicyclic hydrocarbon ring. <P>COPYRIGHT: (C)2009,JPO&INPIT |
