| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a gap between a plurality of adjacent guard ring diffusion layers is narrowed and a breakdown voltage at a terminating part is increased, and to provide its manufacturing method. <P>SOLUTION: A guard ring layer 21 is formed on a semiconductor layer 11 formed on a semiconductor substrate 10. On the guard ring layer 21, a field plate electrode 23 is formed through an oxide film 22. The field plate electrode 23 at the terminating part 200 is formed of polysilicon, and the field plate electrode 23 is connected with the guard ring layer 21 through an aluminum electrode 27. Since the polysilicon can be finely worked by dry etching, the gap between adjacent field plates can be narrowed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
