SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR ARRAY SUBSTRATE, THEIR MANUFACTURING METHOD, AND SEMICONDUCTOR THIN FILM MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor thin film manufacturing method for improving reliability and yield leading to improved quality. SOLUTION: The semiconductor thin film manufacturing method includes: a step (Step 1) of forming an amorphous semiconductor thin film on a substrate, a step (Step 2) of removing a natural oxide film, a step (Step 3) of performing surface oxidizing treatment with ozone or/and oxygen radicals generated by ultraviolet irradiation, and laser annealing step (Step 4) of obtaining a polycrystalline semiconductor thin film with grain boundaries at almost equal intervals and in a lattice-shaped cycle structure. In the laser annealing step, right after the step of removing the natural oxide film without passing through the step of performing the surface oxidizing treatment, laser annealing is performed to obtain the polycrystalline semiconductor thin film while irradiating it with laser beams having energy density which is predetermined energy density lower than optimum energy density. COPYRIGHT: (C)2009,JPO&INPIT