| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can reduce a detection level of natural emitted light by a semiconductor optical detector and a dark current without deteriorating the reliability of a device, and to improve the accuracy of optical detection. SOLUTION: The semiconductor light emitting device 20 includes a lower DBR layer 21, a lower spacer layer 22, an active layer 23, an upper spacer layer 24, a current constriction layer 25, an upper DBR layer 26, and a contact layer 27 in sequence from the side of a substrate 10, wherein a columnar mesa part M1 including an optical outgoing window 28A is formed on the contact layer 27. A semiconductor optical detector 30 is integrated with the mesa part M1 at the opposite side to the optical outgoing window 28A of the mesa part M1, and has a lamination structure including a first conductive type semiconductor layer 31, an optical detection layer 32, and second conductive type semiconductor layers 33 and 34 in sequence from the side of the substrate 10. The width L2 of the optical detection layer 32 is smaller than that L3 of the mesa part M1. COPYRIGHT: (C)2009,JPO&INPIT
|
