| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element and its operation method. <P>SOLUTION: The memory element has a plurality of memory cells arranged in at least one column, each column has at least related one bit line and a supply voltage line. Capacitance exists between the supply voltage line and related at least one bit line for each column. A control circuit controls connection to the supply voltage line relating to a voltage source for each column. The control circuit separates the supply voltage line for at least the selected column from the voltage source so that a voltage level of the supply voltage line is changed in response to arbitrary change in voltage of related at least one bit line. This basic mechanism can provide various assist mechanism such as write-in, bit-flip, reading assist mechanism. This invention provides especially simple and good power efficient technology. <P>COPYRIGHT: (C)2009,JPO&INPIT |
