| 摘要 |
PROBLEM TO BE SOLVED: To provide a satisfactory method for manufacturing at least one quantum dot in a predetermined position on a substrate, a satisfactory design for a lithographic mask, and a satisfactory method for preparing uch a design. SOLUTION: The method for manufacturing a quantum dot 4 includes a step of forming a semiconductor material layer on the insulating layer of the substrate 1; patterning the semiconductor material layer to form at least one semiconductor material line 2 having a width w<SB>L</SB>on the substrate 1; and patterning at least one semiconductor material line 2, by a hydrogen annealing to form at least one quantum dot 4 at least at one predetermined position on the substrate 1. At least one semiconductor material line 2 has a local width variation 3, having 20 to 35 nm wide amplitude A, which is wider than the width w<SB>L</SB>of at least one line of the lines 2, at least at one predetermined position where at least one quantum dot 4 is formed. COPYRIGHT: (C)2009,JPO&INPIT |
