SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD USING SOQ SUBSTRATE, AND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate manufacturing method for forming a semiconductor substrate to reduce thermal stress which is produced by a difference in thermal expansion coefficients between a supporting substrate (silica) and a silicon nitride film formed on the silicon film, and to provide the semiconductor substrate which is manufactured in this method. SOLUTION: The semiconductor substrate manufacturing method uses a SOQ substrate for forming a semiconductor element part on the SOQ substrate and an insulating film different in thermal expansion coefficient from silica around the semiconductor element part. Herein, a separating member for the insulating film is provided around the semiconductor element part. COPYRIGHT: (C)2009,JPO&INPIT