| 摘要 |
PROBLEM TO BE SOLVED: To provide an external resonator type semiconductor laser device having an extremely wide wavelength variable width. SOLUTION: On a gain chip 10, a plurality of striped active layers 11a and 11b of mutually different band gap energies are formed at an interval from each other from a rear end face 10b to an emission end face 10a. Light emitted from the emission end face 10a of the gain chip 10 is made incident on a diffraction grating 3 through a collimating lens 2. The diffracted light of a prescribed wavelength among the diffracted light diffracted by the diffraction grating 3 is reflected by an optical feedback mirror 4, fed back to the active layer 11a or 11b which generated the light, and reflected on the rear end face 10b. Wavelength variation by the rotational drive of the optical feedback mirror 4 is achieved for each of the laser beams L<SB>1</SB>and L<SB>2</SB>of different wavelengths. COPYRIGHT: (C)2009,JPO&INPIT
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