发明名称 METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION STRUCTURE
摘要 <p>In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.</p>
申请公布号 WO2009067594(A1) 申请公布日期 2009.05.28
申请号 WO2008US84185 申请日期 2008.11.20
申请人 QUALCOMM INCORPORATED;LI, XIA;KANG, SEUNG H.;ZHU, XIAOCHUN 发明人 LI, XIA;KANG, SEUNG H.;ZHU, XIAOCHUN
分类号 H01L43/12 主分类号 H01L43/12
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