SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that can reliably suppress the occurrence of a shaping failure in an element isolation region around the end of an active region. SOLUTION: The method includes: a step of forming on a silicon substrate 10 a hard mask 20 having a silicon oxide film 12 and a silicon nitride film 14 narrower than the silicon oxide film 12; a step of using the hard mask 20 as a mask for applying etching to the silicon substrate 10 to form on the silicon substrate 10 a trench 26 which defines the active region 24; and a step of forming a silicon oxide film 28 on the silicon substrate 10 on which the trench 26 is formed. COPYRIGHT: (C)2009,JPO&INPIT