| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that while securing sufficient EM resistance for wiring, reduces inter-wiring-layer and inter-line leaks, increases a TDDB life, and secures a high selection ratio during via-hole etching to have high-reliability wiring, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device includes a wiring groove M1 formed on a first insulating film 1 on a silicon substrate, a tantalum-based barrier metal 2a formed on a sidewall and a bottom portion of the wiring groove M1, a Cu film 2b formed along the tantalum-based barrier metal 2a so as to bury the wiring groove M1, an alloy layer of copper and silicon or a CuSiN layer 3a of copper, silicon, and nitrogen formed on a surface of the Cu film 2b, and an SiNx film 3d formed on the CuSiN layer 3a and first insulating film 1 and having higher density than that of the first insulating film 1. COPYRIGHT: (C)2009,JPO&INPIT
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