| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure that reduces variations in characteristics of a MIS transistor having a thin gate insulating film for a semiconductor device which has a plurality of different gate insulating film thicknesses and also has a high-dielectric-constant gate insulating film and a metal gate. SOLUTION: A first MIS transistor formed in a low-voltage transistor formation region A includes a gate insulating film 5, and a first gate electrode composed of a metal film 6 and a polycrystalline silicon film 9. A second MIS transistor formed in a high-voltage transistor formation region B includes a gate insulating film 5 and a second gate electrode composed of a polycrystalline silicon film 9. Here, the equivalent oxidation film thickness of the gate insulating film 5 in the low-voltage transistor formation region A is thinner than the equivalent oxide film thickness of the gate insulating film 5 in the high-voltage transistor formation region B, and the substrate surface height in the low-voltage transistor formation region A is higher than the substrate surface height in the high-voltage transistor formation region B. COPYRIGHT: (C)2009,JPO&INPIT
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