| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a self-supporting substrate of a group III-V nitride-based semiconductor suitable for the epitaxial growth of a group III-V nitride-based semiconductor, in consideration of that variation of off-angle in the substrate face exists when a nitride-based crystal substrate is manufactured. SOLUTION: The method for manufacturing the self-supporting substrate of a group III-V nitride-based semiconductor comprises using a substrate having an off-angle ofθ°as a ground substrate, growing a group III-V nitride-based single crystal thick film on the ground substrate, then exfoliating the thick film of the group III-V nitride-based semiconductor single crystal from the ground substrate to manufacture the self-supporting substrate having a surface inclined byα°with a variation of±β°in a specified direction from a low-index surface. In the method, when the diameter of a self-supporting substrate after exfoliation is defined as D and the curvature of a warp of the rear surface of the self-supporting substrate is defined as R, the thick film of the group III-V nitride-based semiconductor single crystal is grown so as to satisfy following relation:α±β=n×θ±sin<SP>-1</SP>(D/2R) (deg), wherein, n is a constant. COPYRIGHT: (C)2009,JPO&INPIT
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