| 摘要 |
A helium ion microscope is used for determining dopant information of a sample. Such information embraces the dopant concentration and dopant location. Concerning the dopant location it is possible to determine lateral dimensions of specific areas as well as depth profiles with the disclosed method. The helium ion microscope is adapted to detect in an energy- and angle resolved manner different types of particles, such as scattered heliums ions, secondary electrons, scattered helium atoms. Furthermore, the energy of the incident helium ion beam and its incident angle with respect to the surface are varied. |
