MEMORY WITH DOUBLE-GATE FINFETS AND METHOD OF FABRICATION,申请号KR20067021742-传众专利搜索

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发明名称	MEMORY WITH DOUBLE-GATE FINFETS AND METHOD OF FABRICATION
摘要
申请公布号	KR100899671(B1)	申请公布日期	2009.05.28
申请号	KR20067021742	申请日期	2006.10.19
申请人		发明人
分类号	H01L21/8242;H01L21/336;H01L27/02;H01L27/108;H01L29/786	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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