| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor module having high reliability and low thermal resistance. <P>SOLUTION: At manufacturing of a power semiconductor module comprising first and second insulating substrates, a power semiconductor element is bonded, directly or via other elements, to the surfaces of the first and second insulating substrates facing each other; and first and second heat sinks bonded, respectively, to the first and second insulating substrates by a bonding material which exhibits fluidity at the time of bonding, such that the first and second insulating substrates are sandwiched from the opposite sides, with the first and second heat sinks are bonded, respectively, to the first and second insulating substrates, in a state where a weight being applied to the bonding material is reduced by using an elastic member. <P>COPYRIGHT: (C)2009,JPO&INPIT |
