| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a reflection preventive film for a silicon nitride film by surface wave plasma while giving a high H<SB>2</SB>passivation effect thereto. <P>SOLUTION: When the reflection preventive film for the silicon nitride film is formed by surface wave plasma, plasma treatment is performed as treatment before film forming treatment using NH<SB>3</SB>gas (ammonia gas). Thus, H2 passivation is promoted to form the reflection preventive film with a high H<SB>2</SB>passivation effect. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
