| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor production apparatus capable of producing a homogeneous Si-doped GaN crystal. <P>SOLUTION: The group III nitride semiconductor production apparatus comprises a feed pipe 15 for feeding nitrogen and silane, a Ga feed apparatus 16 for feeding a Ga melt to a crucible 11, and an Na feed apparatus 17 for feeding an Na melt into the crucible 11. Unlike a conventional case where a dopant is fed through a pipe independently formed, the nitrogen and the dopant in the form of a mixture is fed through a single feed pipe 15. This suppresses an increase in dead space, which in turn suppresses the evaporation of Na and enables the production of a high-quality Si-doped GaN crystal. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
