PHASE CHANGE MEMORY ELEMENT, PHASE CHANGE CHANNEL TRANSISTOR AND MEMORY CELL ARRAY

摘要

PROBLEM TO BE SOLVED: To lower a voltage required for phase transition from an amorphous phase to a crystal phase in a phase change memory element. SOLUTION: The phase change memory element (1) includes a first electrode (6), a second electrode (8), and a memory layer (14) provided between the first electrode (6) and the second electrode (8). The memory layer (14) includes at least a first layer (10) constituted of a phase change material stable in an amorphous phase and a crystal phase at room temperature, and a second layer (12) constituted of a resistant material. The resistance value of the second layer (12) is made smaller than a resistance value when the first layer (10) is of the amorphous phase, and is made larger than a resistance value when the first layer (10) is of the crystal phase. COPYRIGHT: (C)2009,JPO&INPIT