| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for avoiding the appearance of an unintended stepped shape on the surface of a substrate by preventing unintended sputtering upon implanting ions. SOLUTION: At first, a first silicon oxide film is formed on the surface of the semiconductor substrate where a semiconductor layer is laminated. Next, patterning is applied to the first silicon oxide film to form a predetermined-shape mask 21. Then, a protection film with a second silicon oxide film 22 thinner than the first silicon oxide film is formed on the whole surface of the semiconductor substrate. In the state that the protection film is formed, oxygen ions are implanted from the surface of the semiconductor substrate into the semiconductor layer, and then heat treatment is applied to form an insulating film in the semiconductor layer with a buried oxide film layer. The fact that the protection film with the second silicon oxide film 22 thinner than the first silicon oxide film is formed after the mask 21 is formed prevents unintended sputtering in an ion implantation process. COPYRIGHT: (C)2009,JPO&INPIT |
