| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element which can restrain a manufacturing process from becoming complex and can suppress the reduction of a luminous efficiency. SOLUTION: This nitride-based semiconductor laser element 50 (nitride-based semiconductor light-emitting element) comprises a semiconductor laser element layer 3 formed over the main surface of a (1-100) plane of an n-type GaN substrate 1 while interposing a base layer 2 and including a light-emitting layer 6 having the (1-100) plane as the main plane, a light-emitting surface 20a formed at the end portion of a region having the light-emitting layer 6 of the semiconductor laser element layer 3 and including a (000-1) plane extending in a direction substantially perpendicular to the main plane (the (1-100) plane) of the light-emitting layer 6, and a reflecting surface 20c formed in the region facing the light-emitting surface 20a of the (000-1) plane, including the growing surface of the semiconductor laser element layer 3, and extending in a direction inclined by an angleθ<SB>1</SB>(about 62 degrees) with respect to the light-emitting surface 20a. COPYRIGHT: (C)2009,JPO&INPIT
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