A TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a transistor (400), the method comprising forming a gate (101) on a substrate (102), forming a spacer (201) on lateral side walls of the gate (101) and on an adjacent portion (202) of the substrate (102), rearranging material of the spacer (201) so that the rearranged spacer (301) covers only a lower portion (303) of the lateral side walls of the gate (101) and an increased portion (302) of the substrate (102), and providing source/drain regions (402, 403) in a portion of the substrate (102) below the rearranged spacer (301).